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Fabrication of NASA's pupil mask begins with the preparation of a silicon wafer, which serves as the foundation for the black silicon structure. The wafer undergoes ion beam figuring (IBF), a non-contact technique that precisely removes surface irregularities at the nanometer scale. This process ensures that the silicon surface is diffraction-limited, eliminating errors that could degrade optical performance. Once the wafer is polished to the required precision, it is then processed lithographically to define the mask pattern, creating reflective and absorptive regions essential for controlling light propagation. To achieve the desired high absorption characteristics, the lithographically patterned wafer undergoes cryogenic etching, a sophisticated process that transforms the silicon surface into a highly textured, black silicon structure. This method utilizes a controlled plasma environment with sulfur hexafluoride (SF6) and oxygen to etch the surface at cryogenic temperatures. The process is carefully optimized by adjusting parameters such as gas flow rates, chamber pressure, ion density, and etch duration, leading to the formation of high-aspect-ratio nanostructures on the silicon substrate. These structures, resembling a dense “forest” of silicon nanospikes, trap and diffuse incoming light, drastically reducing specular reflection. The resulting surface exhibits an ultra-low reflectivity that is orders of magnitude lower than conventional polished silicon. By leveraging NASA’s cutting-edge fabrication technique, the newly developed black silicon pupil mask offers a powerful solution for high-contrast astronomical imaging. Its ability to minimize scattered light and enhance optical contrast makes it an ideal component for space telescopes tasked with directly imaging exoplanets as well as other applications requiring ultra low reflectivity systems.

The technology is an innovative process for creating metal-patterned, structured membranes for micromachining applications. The method uses potassium hydroxide to remove silicon, in combination with XHRiC. Hafnium metal is first patterned onto a silicon nitride wafer, which serves as the starting substrate. XHRiC is then applied to the wafer, followed by patterning with photoresist and etching using O2 plasma to define cut slots in the membrane. The photoresist is then removed. Next, the wafer is bonded to a Pyrex carrier wafer with wax, and the backside of the silicon nitride is patterned and reactive-ion etched. The wafer is then placed in hot potassium hydroxide for 16 hours to remove the silicon layer, creating a silicon nitride membrane. The wafer is subsequently placed in acetone to dissolve the wax. The wafer is resecured to the Pyrex carrier wafer, and the topside of the silicon nitride membrane is subjected to reactive-ion etching. Finally, the XHRiC layer is removed using O2 plasma, and the Pyrex handle wafer is released, resulting in a metal-patterned silicon nitride membrane with cut slots. This novel process supports the creation of structured membranes with a wide range of applications in MEMS fabrication. The use of XHRiC as a patterned hard mask and/or etch protection material enables its application in various MEMS devices. The process can be used to fabricate cut membranes, micro/nano structures, and ultra-thin films for device applications, making it an excellent candidate for MEMS foundry companies and accelerometer manufacturers. It has reached a Technology Readiness Level (TRL) 5 (component validation in a relevant environment) and is now available for patent licensing.