Simplified Complimentary Metal-oxide-semiconductor Manufacturing Technique

This invention provides a method and system for fabricating a biomarker sensor array by dispensing one or more entities using a precisely positioned, electrically biased nanoprobe immersed in a buffered fluid over a transparent substrate. Fine patterning of the substrate can be achieved by positioning and selectively biasing the probe in a particular region, changing the pH in a sharp, localized volume of fluid less than 100 nm in diameter, resulting in a selective processing of that region. One example of the implementation of this technique is related to Dip-Pen Nanolithography (DPN), where an Atomic Force Microscope probe can be used as a pen to write protein and DNA Aptamer inks on a transparent substrate functionalized with silane-based self-assembled monolayers. But it would be recognized that the invention has a much broader range of applicability. For example, the invention can be applied to formation of patterns using biological materials, chemical materials, metals, polymers, semiconductors, small molecules, organic and inorganic thins films, or any combination of these.

This technology consists of a photoelectrochemical cell composed of thin metal oxide films. It uses sunlight (primarily the ultraviolet (UV), visible and Infrared (IR) portions)) and inexpensive titanium dioxide composites to perform the reaction. The device can be used to capture carbon dioxide produced in industrial processes before it is emitted to the atmosphere and convert it to a useful fuel such as methane. These devices can be deployed to the commercial market with low manufacturing and materials costs. They can be made extremely compact and efficient and used in sensor and detector applications.

The technology uses additive print manufacturing to produce hierarchical and integrated structural and functional elements into large-area thin-film structures. Adding these structural and functional elements has the potential to enable very lightweight, large-scale thin-films with improved damage tolerance, self-deployment capability, flexibility, and multifunctional (optical, thermal, electrical) connectivity and interrogation capabilities. Based on simple and proven additive manufacturing concepts, advanced geometrical, biomimetic (insect wing), and hierarchical structures could be applied to, or eventually with further development integrated within the bulk of large-area thin films using roll-to-roll processing techniques for a potentially low-cost manufacturing approach. The subject technology potentially addresses many of the disadvantages of current large-scale membrane material systems, which are prone to damage or require extensive deployment and support structures.

Several of the patented methods included in this suite of technologies enable super-hetero-epitaxy of rhombohedral/cubic compound semiconductors on specially oriented trigonal (e.g. sapphire) or hexagonal (e.g. quartz) crystal wafer substrates. This includes alignment of the growth crystal lattice with the underlying substrate lattice to minimize misfit strain-induced dislocation defects in the growing crystal. Thus thicker, defect-free crystal layers can be made. Rhombohedral/Cubic crystal twin defects which is 60 degree rotated on [111] orientation in a rhombohedral/cubic SiGe layer structure can be reduced to well less than 1% by volume, essentially providing a defect-free semiconductor material. Alternately, engineered lattice structures with a high degree of twinning can provide SiGe with improved thermoelectric properties due to the phonon scattering that inhibits thermal conduction without compromising electrical conductivity. Additional patented technologies in this suite provide for physical vapor deposition (PVD) growth methods utilizing molten sputtering targets and thermal control of heated substrates, including electron beam heating, in order to give the atoms in the sputtered vapor or on the substrate surface the energy needed for the desired crystal growth. The remaining patented technologies enable x-ray diffraction methods for detecting and mapping crystal twin defects across the entire as-grown semiconductor layer. These defects are critical to the performance of any semiconductor device manufactured from such compound semiconductor materials.

The nanoionic-based switches developed by NASA's Glenn Research Center exploit the properties of some amorphous materials that can incorporate relatively large amounts of metal and behave as solid electrolytes. As with liquid electrolytes found in lead-acid batteries, for example, solid electrolytes consist of mobile ions which undergo oxidation/reduction reactions at the anode and cathode of the system. The ionic conductivity of such a material can be of the same order of magnitude as the electronic conductivity of a semiconductor but without the drawbacks of an electromechanical device. In the nanoionic switch, ions are formed at an anode and migrate into the solid electrolyte, while electrons are injected from a cathode, thereby causing the growth of metal nanowires through the electrolyte from the cathode to the corresponding anode when a positive DC bias is applied. Once a nanowire has grown sufficiently to form an electrically conductive path between the electrodes, the switch is closed and no electric power is needed to maintain the connection, unlike in a MEMS or semiconductor-based switch. Moreover, the process of making the connection can easily be reversed by applying a negative bias, causing the wires to ungrow and the switch to open. Thus, NASA's state-of-the-art device is a reversible electrochemical switch that can have geometric features as small as nanometers. The process time for making or breaking the connection is very brief -- about a nanosecond. In addition, this nanoionic material can be deposited in such a way to form multilayer control circuits, which has the potential to minimize circuit footprints, reduce overall circuit losses, and provide unprecedented ease of integration.