Advanced Hydrogen and Hydrocarbon Gas Sensors

Prior approaches to bonding a SiC sensor and a SiC cover member relied on either electrostatic bonding or direct bonding using glass frits. The problem with the former is that its relatively weak bond strength may lead to debonding during thermal cycling, while the latter requires the creation of apertures that can allow sealant to leak. Glenn's innovation uses NASA's microelectromechanical system direct chip attach (MEMS-DCA) technology that can be bulk-manufactured to reduce sensor costs. The MEMS-DCA process allows a direct connection to be made between chip and pins, thereby eliminating wire bonding. Sensors and electronics are attached in a single-stage process to a multifunctional package, which, unlike previous systems, can be directly inserted into the housing. Additional thick pins within the electrical outlet allow the package to be connected to external circuitry. Furthermore, because the top and bottom substrates' thermomechanical properties are similar to that of the sensors, the problem of mismatch in the coefficient of thermal expansion is significantly reduced, minimizing thermal cycling and component fatigue. By protecting sensors and electronics in temperatures up to 600°C, approximately twice what has previously been achievable, Glenn's innovation enables SiC components to realize one of their most exciting possibilities - direct placement within high-temperature environments.

Conventional ambient-temperature oxygen sensors are limited in various ways: optically based sensors can be expensive and challenging to manufacture; electrochemical cells with liquid electrolytes can have limited lifetimes and become leak sources; and both types of sensors are difficult to miniaturize. These problems are addressed with Glenn's novel ambient temperature oxygen microsensor, which is based on a Nafiontm polymer electrolyte, microfabricated using thin-film technologies. In the past, one drawback of Nafiontm film has been that it can lose conductivity when the moisture content in the film is too low, potentially affecting sensor operation. Glenn researchers devised a method to use certain salts to hold water molecules in the Nafiontm film structure at room temperature. The presence of these salts provides extra sites in the film to promote proton (H+) mobility, thus improving film conductivity and overall sensor performance, particularly in arid and high-temperature environments. The innovative use of metal/metal oxide as the reference electrode enables miniaturization by eliminating the reference gas and sealing the reference electrode. The combination of interdigitized electrodes with the unique metal/metal oxide reference electrode permits sensor operation in either potentiometric or amperometric mode, as appropriate. In potentiometric mode, which measures voltage differences between working and reference electrodes in different gases, the voltage differences can be monitored with a voltmeter; however, the sensor itself does not need a power source. In room-temperature testing, the sensor achieved repeatable responses to 21 percent oxygen in nitrogen (using nitrogen as a baseline gas), and also detected oxygen from 7 to 21 percent, making Glenn's breakthrough technology usable for personal health monitoring as well as fire detection, fuel-leak detection, and environmental monitoring.

A team of NASA Glenn researchers has developed a portfolio of SiC-enabled electronics and sensors. SiC's ability to function in harsh environments&#8212high-temperature, high-power, high radiation&#8212enables much better performance in many combustion applications. Building on their successful and miniaturized SiC pressure sensor package, the team added a resistance temperature detector (RTD) to the same chip. Having both sensors on a single SiC substrate facilitates the simultaneous measurement of pressure and temperature. The integrated P/T sensors are fabricated with a prescribed sequence of photo lithography and reactive ion etching fabrication steps to create patterns and structures and deposit RTD elements and other layers. Designed to monitor jet engine health, this P/T sensor can be placed directly on the engine, close to the combustion source, for highly accurate, real-time data analysis. As shown in the figures below, the sensor has been tested and characterized for long-term high-temperature stability and response. The data prove that the sensor’s performance is repeatable, with negligible hysteresis. Compared to conventional silicon piezoresistive sensors, this new sensor is more viable in high-temperature environments.

The low-temperature oxidation catalyst technology employs a novel catalyst formulation, termed platinized tin oxide (Pt/SnOx). The catalysts can be used on silica gel and cordierite catalyst supports, and the latest developments provide sprayable formulations for use on a range of support types and shapes. Originally developed for removal of CO, the catalyst has also proven effective for removal of formaldehyde and other lightweight hydrocarbons. NASA researchers have also extended the capability to include reduction of NOx as well as developed advanced chemistries that stabilized the catalyst for automotive catalytic converters via the engineered addition of other functional components. These catalyst formulations operate at elevated temperatures and have performed above the EPA exhaust standards for well beyond 25,000 miles. In addition, the catalyst can be used in diesel engines because of its ability to operate over an increased temperature range. For use as a gas sensor, the technology takes advantage of the exothermic nature of the catalytic reaction to detect formaldehyde, CO, or hydrocarbons, with the heat being produced proportional to the amount of analyte present.

NASA Glenn's durable, extreme-temperature, integrated circuit chips begin with the replacement of conventional silicon IC transistors with n-channel SiC junction field effect transistors (JFET) and resistors that can reliably function above 500°C. JFETs with the necessary high-temperature stability and electrical gain are fabricated from commercial 4H-SiC wafers with epilayers using dry etching and a self-aligned n-type ion implantation. An innovative circuit approach creates digital logic gates from these normally-on n-channel JFETs and resistors. Using two levels of 500°C durable metal to interconnect numerous SiC gates, complex circuits enabling a variety of control, operation and sensing functions for intelligent systems in harsh environments can be implemented in physically small chips. The challenge of getting electrical signals to and from the chip in a harsh environment is overcome by the use of the iridium interfacial stack (IrIS) that acts simultaneously as a bond metal and diffusion barrier, and can be used on an ohmic contact to the SiC. Combined with Glenn-developed high-temperature durable ceramic chip packaging and harsh environment sensor technology, this revolutionary durable integrated circuit technology is game changing for harsh-environment applications of all types.