Advanced Hydrogen and Hydrocarbon Gas Sensors

Conventional ambient-temperature oxygen sensors are limited in various ways: optically based sensors can be expensive and challenging to manufacture; electrochemical cells with liquid electrolytes can have limited lifetimes and become leak sources; and both types of sensors are difficult to miniaturize. These problems are addressed with Glenn's novel ambient temperature oxygen microsensor, which is based on a Nafiontm polymer electrolyte, microfabricated using thin-film technologies. In the past, one drawback of Nafiontm film has been that it can lose conductivity when the moisture content in the film is too low, potentially affecting sensor operation. Glenn researchers devised a method to use certain salts to hold water molecules in the Nafiontm film structure at room temperature. The presence of these salts provides extra sites in the film to promote proton (H+) mobility, thus improving film conductivity and overall sensor performance, particularly in arid and high-temperature environments. The innovative use of metal/metal oxide as the reference electrode enables miniaturization by eliminating the reference gas and sealing the reference electrode. The combination of interdigitized electrodes with the unique metal/metal oxide reference electrode permits sensor operation in either potentiometric or amperometric mode, as appropriate. In potentiometric mode, which measures voltage differences between working and reference electrodes in different gases, the voltage differences can be monitored with a voltmeter; however, the sensor itself does not need a power source. In room-temperature testing, the sensor achieved repeatable responses to 21 percent oxygen in nitrogen (using nitrogen as a baseline gas), and also detected oxygen from 7 to 21 percent, making Glenn's breakthrough technology usable for personal health monitoring as well as fire detection, fuel-leak detection, and environmental monitoring.

A team of NASA Glenn researchers has developed a portfolio of SiC-enabled electronics and sensors. SiC's ability to function in harsh environments&#8212high-temperature, high-power, high radiation&#8212enables much better performance in many combustion applications. Building on their successful and miniaturized SiC pressure sensor package, the team added a resistance temperature detector (RTD) to the same chip. Having both sensors on a single SiC substrate facilitates the simultaneous measurement of pressure and temperature. The integrated P/T sensors are fabricated with a prescribed sequence of photo lithography and reactive ion etching fabrication steps to create patterns and structures and deposit RTD elements and other layers. Designed to monitor jet engine health, this P/T sensor can be placed directly on the engine, close to the combustion source, for highly accurate, real-time data analysis. As shown in the figures below, the sensor has been tested and characterized for long-term high-temperature stability and response. The data prove that the sensor’s performance is repeatable, with negligible hysteresis. Compared to conventional silicon piezoresistive sensors, this new sensor is more viable in high-temperature environments.

NASA Glenn's durable, extreme-temperature, integrated circuit chips begin with the replacement of conventional silicon IC transistors with n-channel SiC junction field effect transistors (JFET) and resistors that can reliably function above 500°C. JFETs with the necessary high-temperature stability and electrical gain are fabricated from commercial 4H-SiC wafers with epilayers using dry etching and a self-aligned n-type ion implantation. An innovative circuit approach creates digital logic gates from these normally-on n-channel JFETs and resistors. Using two levels of 500°C durable metal to interconnect numerous SiC gates, complex circuits enabling a variety of control, operation and sensing functions for intelligent systems in harsh environments can be implemented in physically small chips. The challenge of getting electrical signals to and from the chip in a harsh environment is overcome by the use of the iridium interfacial stack (IrIS) that acts simultaneously as a bond metal and diffusion barrier, and can be used on an ohmic contact to the SiC. Combined with Glenn-developed high-temperature durable ceramic chip packaging and harsh environment sensor technology, this revolutionary durable integrated circuit technology is game changing for harsh-environment applications of all types.

To avoid catastrophic failure, traditional electrical ohmic contacts must be placed at some distance from the optimal position (especially for sensors) in high-temperature environments. In addition, conventional metallization techniques incur significant production costs because they require multiple process steps of successive depositions, photolithography, and etchings to deposit the desired ohmic contact material. Glenn's novel production method both produces ohmic contacts that can withstand higher temperatures than ever before (up to 600°C), and permits universal and simultaneous ohmic contacts on n- and p-type surfaces. This makes fabrication much less time-consuming and expensive while also increasing yield. This innovative approach uses a single alloy conductor to form simultaneous ohmic contacts to n- and p-type 4H-SiC semiconductor. The single alloy conductor also forms an effective diffusion barrier against gold and oxygen at temperatures as high as 800°C. Glenn's extraordinary method enables a faster and less costly means of producing SiC-based sensors and other devices that provide quicker response times and more accurate readings for numerous applications, from jet engines to down-hole drilling, and from automotive engines to space exploration.

Pressure sensors play an important role in engine maintenance and monitoring systems by diagnosing problems before they happen. To capture the most accurate data, however, these sensors must be placed directly on an engine. In order to withstand extreme temperature and vibration, traditional pressure sensor technologies are bulky and complex, lacking the on-board control of microsystem technologies. Glenn's new capacitive pressure sensor system and packaging is the first of its kind to achieve high-temperature capability while maintaining miniaturization. This novel system consists of a Clapp-type oscillator that is fabricated on a high temperature alumina substrate. It comprises a silicon carbide (SiC) nitride pressure sensor, a metal-semiconductor field-effect transistor, and one or more chip resistors, wire-wound inductors, and SiC metal-insulator-metal (MIM) capacitors. The pressure sensor is located in the tank circuit of the oscillator so that a variation in pressure causes a change in capacitance, thus altering the resonant frequency of the sensing system. The chip resistors, inductors, and MIM capacitors have been characterized at temperature and operational frequency, and exhibit less than 5% variance in electrical performance. The system, which can be installed with a borescope plug adaptor in an on-wing operating engine, has been extensively tested and proven to operate reliably under extreme conditions. Its compact size, wireless capability, and ability to provide real-time in-situ data acquisition make this technology a game-changer in next-generation maintenance and monitoring systems.