Fabrication of Binary Phase Photon Sieves

This NASA Glenn innovation is a novel multi-junction photovoltaic cell constructed using selenium as a bonding material sandwiched between a thin film multi-junction wafer and a silicon substrate wafer, enabling higher efficiencies. A multi-junction photovoltaic cell differs from a single junction cell in that it has multiple sub-cells (p-n junctions) and can convert more of the sun's energy into electricity as the light passes through each layer. To further improve the efficiencies, this cell has three junctions, where the top wafer is made from high solar energy absorbing materials that form a two-junction cell made from the III-V semiconductor family, and the bottom substrate remains as a simple silicon wafer. The selenium interlayer is applied between the top and bottom wafers, then pressure annealed at 221°C (the melting temperature of selenium), then cooled. The selenium interlayer acts as a connective layer between the top cell that absorbs the short-wavelength light and the bottom silicon-based cell that absorbs the longer wavelengths. The three-junction solar cell manufactured using selenium as the transparent interlayer has a higher efficiency, converting more than twice the energy into electricity than traditional cells. To obtain even higher efficiencies of over 40%, both the top and bottom layers can be multi-junction solar cells with the selenium layer sandwiched in between. The resultant high performance multi-junction photovoltaic cell with the selenium interlayer provides more power per unit area while utilizing a low-cost silicon-based substrate. This unprecedented combination of increased efficiency and cost savings has considerable commercial potential. This is an early-stage technology requiring additional development. Glenn welcomes co-development opportunities.

Performance of solar cells and other electronic devices such as transistors can be improved greatly if carrier mobility is increased. Si and Ge have Type-II bandgap alignment in cubically strained and relaxed layers. Quantum well and super lattice with Si, Ge, and SiGe have been good noble structures to build high electron mobility layer and high hole mobility layers. However, the atomic lattice constant of Ge is bigger than that of Si and direct epitaxial growth generates large density of misfit dislocations which decrease carrier mobility and shorten device life time. So it required special buffer layers such as super lattice or gradient indexed layers to grow Ge on Si wafers or Si on Ge wafers. The growth of these buffer layers takes extra effort and time such as post-annealing process to remove dislocations by dislocation gliding inside buffer layer. This invention is a fabrication method for high mobility layer structures of rhombohedrally aligned SiGe on a trigonal substrate. The invention utilizes C-plane (0001) Sapphire which has a triangle plane, and a Si (Ge) (C) (111) crystal or an alloy of group TV semiconductor (111) crystal grown on the Sapphire.

Fabrication of NASA's pupil mask begins with the preparation of a silicon wafer, which serves as the foundation for the black silicon structure. The wafer undergoes ion beam figuring (IBF), a non-contact technique that precisely removes surface irregularities at the nanometer scale. This process ensures that the silicon surface is diffraction-limited, eliminating errors that could degrade optical performance. Once the wafer is polished to the required precision, it is then processed lithographically to define the mask pattern, creating reflective and absorptive regions essential for controlling light propagation. To achieve the desired high absorption characteristics, the lithographically patterned wafer undergoes cryogenic etching, a sophisticated process that transforms the silicon surface into a highly textured, black silicon structure. This method utilizes a controlled plasma environment with sulfur hexafluoride (SF6) and oxygen to etch the surface at cryogenic temperatures. The process is carefully optimized by adjusting parameters such as gas flow rates, chamber pressure, ion density, and etch duration, leading to the formation of high-aspect-ratio nanostructures on the silicon substrate. These structures, resembling a dense “forest” of silicon nanospikes, trap and diffuse incoming light, drastically reducing specular reflection. The resulting surface exhibits an ultra-low reflectivity that is orders of magnitude lower than conventional polished silicon. By leveraging NASA’s cutting-edge fabrication technique, the newly developed black silicon pupil mask offers a powerful solution for high-contrast astronomical imaging. Its ability to minimize scattered light and enhance optical contrast makes it an ideal component for space telescopes tasked with directly imaging exoplanets as well as other applications requiring ultra low reflectivity systems.

This innovation represents an alternative method to skip several of the conventional fabrication steps, using a mask designed to allow molecules in a sputtering plume to pass through openings engineered in the mask. This causes material to go where desired, without photoresist, and without selective etching, thus simplifying the process, reducing cost, chemical waste; and increasing throughput. This method masks areas that do not need deposited material, causing local deposition instead. The shape and size are within tolerance. No etching steps, no photoresist patterning, and no metal removal is necessary. Other than planarization, selective deposition has replaced every step in the conventional process, accomplishing the same result in 8 steps instead of 19. The technology can be easily used to fabricate custom chips and specialized sensors and devices that use the group III-V and II - VI semiconductor materials.

Innovators at NASA Glenn have devised a new method for harnessing the high transmission and clarity associated with optical glasses in a robust polyimide aerogel. This process uses sol-gel synthesis technology with aromatic dianhydrides and diamines as the precursors, and a trifunctional triacid chloride that arranges itself into a three-dimensional (3D) matrix with a low refractive index. The liquid portion of the gel is then removed by supercritical fluid extraction in order to produce the polyimide aerogel and maintain the desired 3D structure without pore collapse. The result is a cross-linked polyimide aerogel that allows for light wave transmittance while retaining low thermal conductivity. This unique material can be made into thin blocks, or highly flexible films as thin as 0.5 mm. While some embodiments have a yellow color, other embodiments may be nearly colorless. When compared to high-opacity polyimide aerogels, they have much greater surface area (up to 880 m2/g) and a very homogenous pore size (10 to 20 nm) with only a minor penalty in density (0.15 g/cc vs 0.10 g/cc). These strong, optically transparent aerogels incorporate a number of unique properties with applicability to a host of potential new applications, making this innovation a game-changer in the global aerogel market. Glenn welcomes co-development opportunities.