Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structures

electrical and electronics
Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structures (LAR-TOPS-161)
Method to produce combination of devices on opposite sides of a sapphire substrate
NASA Langley Research Center has developed a double sided Si(Ge)/Sapphire/III-Nitride hybrid structure. This technology uses both sides of a sapphire wafer to build device structures; on one side, making either Si or SiGe devices, and on the other side, making III-nitride device structures (e.g. GaN, InGaN, AlGaN). This innovation builds upon several previous innovations by NASA Langley Research Center, all relating to making silicon germanium semiconductor device structures on sapphire wafers.

The Technology
III-nitride devices are commonly made on sapphire substrates today for various commercial electronic and optoelectronic applications. Thus, this innovation relates directly to the combination of devices on opposite sides of the sapphire substrate. One possible device combination is to have LEDs one side and solar cells on the other, such as for displays.
Tablet computer in the sun III-Nitride LED/LD structure on front side and Si/SiGe device layer on the back side
  • Novel semiconductor device structure that combines two distinctly different semiconductor materials, each with separate performance strengths, to create novel hybrid devices.
  • Transparent substrate can provide back side illumination of solar cell.
  • Builds upon proven technologies

  • Self-powered display
  • Solar cell-LED display
Technology Details

electrical and electronics
LAR-17922-1 LAR-17922-2
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